Electrochemical Metallization Memristive Devices with Al Active Electrode Using Engineered Mixed Hexagonal/Orthorhombic Polycrystalline YMnO3

We report electrochemical metallization (ECM) resistive switching in polycrystalline YMnO3 memristive devices using Al as an active electrode. Al/YMnO3/Pt devices exhibit bipolar resistive switching with a high ROFF/RON ratio of 104, low operational voltages of VSet ≈ 1.7 V and VReset ≈ −0.36 V and...

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Autors principals:	Rong Wu, Sebastian W. Schmitt, Florian Maudet, Dong Jik Kim, Veeresh Deshpande, Catherine Dubourdieu
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2024-05-01
Col·lecció:	Small Structures
Matèries:	bipolar resistive switching crystalline phase coexistence electrochemical metallization memristive device polycrystalline YMnO3 structure‐physical properties
Accés en línia:	https://doi.org/10.1002/sstr.202300494
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