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Large perpendicular magnetic anisotropy at Fe/rock-salt-type Cr-oxide interface synthesized via oxygen-driven chemical layer exchange process

Perpendicular magnetic anisotropy (PMA) induced at the interface of the metallic magnetic layer/oxide layer plays a major role in scaling of state-of-the-art spin-transfer-torque magnetoresistive random access memory. The realization of PMA requires the development of mature interface manipulation t...

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Egile Nagusiak: Yuki Iida, Qingyi Xiang, Thomas Scheike, Zhenchao Wen, Jun Okabayashi, Jun Uzuhashi, Tadakatsu Ohkubo, Kazuhiro Hono, Hiroaki Sukegawa, Seiji Mitani
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: AIP Publishing LLC 2024-11-01
Saila:APL Materials
Sarrera elektronikoa:http://dx.doi.org/10.1063/5.0233103
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