Simulation of TiN/HfO2/Pt memristor I–V curve for different conductive filament thickness
The operation of the TiN/HfO2/Pt bipolar memristor has been simulated by the finite elements method using the Maxwell steady state equations as a mathematical basis. The simulation provided knowledge of the effect of conductive filament thickness on the shape of the I–V curve. The conductive filamen...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Pensoft Publishers
2021-06-01
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| coleção: | Modern Electronic Materials |
| Acesso em linha: | https://moem.pensoft.net/article/73289/download/pdf/ |
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