Scaling Properties of Ru, Rh, and Ir for Future Generation Metallization
The downscaling of metal lines in CMOS devices to subnanometer sizes leads to an increase in their resistivity. Thus, the lower electron mean free paths of Ru, Rh, and Ir make them promising materials to replace Cu in conventional interconnected structures with sub-ten-nanometer dimensions. In this...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2023-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/10173105/ |
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