Effect of AlN Cap Layer on Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field Effect Transistor

In this study, AlGaN/GaN heterostructure field-effect transistors (HFETs) with an AlN cap layer and a GaN cap layer were fabricated. The devices were of different sizes. Capacitance–voltage (<i>C-V</i>) and current–voltage (<i>I-V</i>) curves were measured. Based on two-dimensional (2D) scattering t...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Qianding Cheng, Ming Yang, Zhiliang Gao, Ruojue Wang, Jihao He, Feng Yan, Xu Tang, Weihong Zhang, Zijun Hu, Jingguo Mu
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	MDPI AG 2025-09-01
Sarja:	Micromachines
Aiheet:	AlGaN/GaN HFETs AlN cap layer polarization Coulomb field scattering electron mobility
Linkit:	https://www.mdpi.com/2072-666X/16/10/1093
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