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PN-Type Near-Infrared High-Speed Graphene Heterojunction Photodetector

In this work, a GaAs-substrate-based PN-type near-infrared high-speed graphene heterojunction photodetector is proposed. The proposed photodetector is only composed of a P-type graphene heterojunction absorption part and a N-type GaAs substrate, where the P-type graphene heterojunction is formed by...

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Principais autores: Yun Fang, Qingmin Fu, Yuhang Wei, Jian Liu, Wanchun Yang, Dandan Wang, Xue Zhang
Formato: Artigo
Idioma:Inglês
Publicado em: IEEE 2025-01-01
coleção:IEEE Photonics Journal
Assuntos:
Near-infrared
photodetector
heterojunction
graphene
high-speed
Acesso em linha:https://ieeexplore.ieee.org/document/11084908/
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