Analog and Digital Bipolar Resistive Switching in Co–Al-Layered Double Hydroxide Memristor
We demonstrate a nonvolatile memristor based on Co–Al-layered double hydroxide (Co–Al LDH). We also introduce a memristor that has a hexazinone-adsorbing Co–Al LDH composite active layer. Memristor characteristics could be modulated by adsorbing hexazinone with Co–Al LDHs in the active layer. While...
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| Glavni autori: | , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2020-10-01
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| Serija: | Nanomaterials |
| Teme: | |
| Online pristup: | https://www.mdpi.com/2079-4991/10/11/2095 |
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