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High-Resolution Photoemission Study of Neutron-Induced Defects in Amorphous Hydrogenated Silicon Devices

In this paper, by means of high-resolution photoemission, soft X-ray absorption and atomic force microscopy, we investigate, for the first time, the mechanisms of damaging, induced by neutron source, and recovering (after annealing) of p-i-n detector devices based on hydrogenated amorphous silicon (...

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Asıl Yazarlar: Francesca Peverini, Marco Bizzarri, Maurizio Boscardin, Lucio Calcagnile, Mirco Caprai, Anna Paola Caricato, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Giacomo Cuttone, Sylvain Dunand, Livio Fanò, Benedetta Gianfelici, Omar Hammad, Maria Ionica, Keida Kanxheri, Matthew Large, Giuseppe Maruccio, Mauro Menichelli, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Stefania Pallotta, Andrea Papi, Daniele Passeri, Marco Petasecca, Giada Petringa, Igor Pis, Gianluca Quarta, Silvia Rizzato, Alessandro Rossi, Giulia Rossi, Andrea Scorzoni, Cristian Soncini, Leonello Servoli, Silvia Tacchi, Cinzia Talamonti, Giovanni Verzellesi, Nicolas Wyrsch, Nicola Zema, Maddalena Pedio
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: MDPI AG 2022-10-01
Seri Bilgileri:Nanomaterials
Konular:
amorphous hydrogenated silicon
photoemission
X-ray absorption
Online Erişim:https://www.mdpi.com/2079-4991/12/19/3466
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