In Situ Plasma‐Grown Silicon‐Oxide for Polysilicon Passivating Contacts
Abstract Large‐scale manufacturing of polysilicon‐based passivating contacts for high‐efficiency crystalline silicon (c‐Si) solar cells demands simple fabrication of thermally stable SiOx films with well controlled microstructure and nanoscale thickness to enable quantum‐mechanical tunneling. Here,...
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| Autors principals: | , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley-VCH
2020-11-01
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| Col·lecció: | Advanced Materials Interfaces |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1002/admi.202000589 |
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