Bulk‐Like Mott‐Transition in Ultrathin Cr‐Doped V2O3 Films and the Influence of its Variability on Scaled Devices

Abstract The pressure‐driven Mott‐transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5%, and 15%. A change in resistivity of nearly two orders of magnitude is found for 2%...

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Detalhes bibliográficos

Principais autores:	Johannes Mohr, Tyler Hennen, Daniel Bedau, Rainer Waser, Dirk J. Wouters
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley-VCH 2024-10-01
coleção:	Advanced Physics Research
Assuntos:	doped V2O3 high‐pressure measurements Mott‐transitions percolation scaling laws
Acesso em linha:	https://doi.org/10.1002/apxr.202400040
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