Influence of Different Carrier Gases, Temperature, and Partial Pressure on Growth Dynamics of Ge and Si Nanowires
The broad and fascinating properties of nanowires and their synthesis have attracted great attention as building blocks for functional devices at the nanoscale. Silicon and germanium are highly interesting materials due to their compatibility with standard CMOS technology. Their combination provides...
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| Główni autorzy: | , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
MDPI AG
2023-10-01
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| Seria: | Nanomaterials |
| Hasła przedmiotowe: | |
| Dostęp online: | https://www.mdpi.com/2079-4991/13/21/2879 |
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