Simultaneous resistance switching and rectifying effects in a single hybrid perovskite

Abstract Halide perovskites with naturally coupled electron‐ion dynamics hold great potential for nonvolatile memory applications. Self‐rectifying memristors are promising as they can avoid sneak currents and simplify device configuration. Here we report a self‐rectifying memristor firstly achieved...

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Bibliografiske detaljer

Principais autores:	Xuefen Song, Junran Zhang, Yuchi Qian, Zhongjing Xia, Jinlian Chen, Hao Yin, Jing Liu, Linbo Feng, Tianyu Liu, Zihong Zhu, Yuyang Hua, You Liu, Jiaxiao Yuan, Feixiang Ge, Dawei Zhou, Mubai Li, Yang Hang, Fangfang Wang, Tianshi Qin, Lin Wang
Format:	Artigo
Sprog:	Inglês
Udgivet:	Wiley 2024-09-01
Serier:	InfoMat
Fag:	halide perovskite low power low SET voltage memristor self‐rectifying
Online adgang:	https://doi.org/10.1002/inf2.12562
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