A 0.45‐V low‐power low‐noise amplifier using a wideband image‐rejection technology
Abstract A 0.45‐V low‐power wideband image‐rejection low‐noise amplifier (LNA) using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18‐μm CMOS process has been proposed. The supply voltage, power consumption and chip area of the proposed LNA can be reduced using forward body biasing, folded cas...
Bewaard in:
| Hoofdauteurs: | , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Wiley
2023-12-01
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| Reeks: | IET Microwaves, Antennas & Propagation |
| Onderwerpen: | |
| Online toegang: | https://doi.org/10.1049/mia2.12432 |
| Tags: |
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