Investigation of the Carrier Movement through the Tunneling Junction in the InGaP/GaAs Dual Junction Solar Cell Using the Electrically and Optically Biased Photoreflectance Spectroscopy

For examining the carrier movements through tunnel junction, electrically and optically-biased photoreflectance spectroscopy (EBPR and OBPR) were used to investigate the internal electric field in the InGaP/GaAs dual junction solar cell at room temperature. At InGaP and GaAs, the strength of p-n jun...

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Principais autores:	Sanam SaeidNahaei, Hyun-Jun Jo, Sang Jo Lee, Jong Su Kim, Sang Jun Lee, Yeongho Kim
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2021-01-01
coleção:	Energies
Assuntos:	InGaP/GaAs dual junction solar cell optically biased photoreflectance electrically biased photoreflectance tunnel junction
Acesso em linha:	https://www.mdpi.com/1996-1073/14/3/638
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