Electronic Poiseuille flow in hexagonal boron nitride encapsulated graphene field effect transistors
Electron-electron interactions in graphene are sufficiently strong to induce a correlated and momentum-conserving flow such that charge carriers behave similarly to the Hagen-Poiseuille flow of a classical fluid. In the current work, we investigate the electronic signatures of such a viscous charge...
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| Автори: | , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
American Physical Society
2023-05-01
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| Серія: | Physical Review Research |
| Онлайн доступ: | http://doi.org/10.1103/PhysRevResearch.5.023075 |
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