First-Principles Study of Biaxial Strain Effects on Schottky Barrier Modulation in Graphene/ZnSe Heterostructures
Reducing the Schottky barrier at the metal–semiconductor interface and achieving Ohmic contact is crucial for the development of high-performance Schottky field-effect transistors. This paper investigates the stability, interface interactions, interlayer charge transfer, and types of Schottky contac...
Na minha lista:
| Principais autores: | , , , |
|---|---|
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2025-12-01
|
| Serier: | Nanomaterials |
| Fag: | |
| Online adgang: | https://www.mdpi.com/2079-4991/15/23/1816 |
| Tags: |
Ingen Tags, Vær først til at tagge denne postø!
|