High temperature dielectric properties of (BxNyOz) thin films deposited using ion source assisted physical vapor deposition
The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate b...
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| Hlavní autor: | |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
World Scientific Publishing
2015-12-01
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| Edice: | Journal of Advanced Dielectrics |
| Témata: | |
| On-line přístup: | http://www.worldscientific.com/doi/pdf/10.1142/S2010135X15500290 |
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