Defect Inspection Techniques in SiC
Abstract With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the p...
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| Autors principals: | , , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
SpringerOpen
2022-03-01
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| Col·lecció: | Nanoscale Research Letters |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1186/s11671-022-03672-w |
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