Study on the high spectral intensity at the Dirac energy of single-layer graphene on an SiC substrate
We have investigated electron band structure of epitaxially grown graphene on an SiC(0001) substrate using angle-resolved photoemission spectroscopy. In single-layer graphene, abnormal high spectral intensity is observed at the Dirac energy whose origin has been questioned between in-gap states indu...
Guardat en:
| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IOP Publishing
2016-01-01
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| Col·lecció: | New Journal of Physics |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1088/1367-2630/18/4/043005 |
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