The Endurance and Reliability Mechanisms Investigation of InGaZnO and InSnO Thin Film Transistors

Amorphous oxide semiconductor-thin film transistors (AOS-TFTs) have attracted considerable attention due to their impressive performance in various applications. However, there is a limited amount of study available on the reliability of AOS-TFTs. This work investigates the endurance and reliability...

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Autores principales:	Jie Luo, Yanyu Yang, Gangping Yan, Chuqiao Niu, Yunjiao Bao, Yupeng Lu, Zhengying Jiao, Jinjuan Xiang, Guilei Wang, Gaobo Xu, Huaxiang Yin, Chao Zhao, Jun Luo
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	IEEE 2024-01-01
Colección:	IEEE Journal of the Electron Devices Society
Materias:	InGaZnO thin film transistor InSnO thin film transistor endurance test electron depletion and restoration
Acceso en línea:	https://ieeexplore.ieee.org/document/10604821/
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