A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)

The evolution of the dislocation density during Czochralski growth is computed by the combination of global thermal calculations and local computation of the stress and dislocation density in the crystal. The global simulation was performed using the open-source software Elmer (version 8.4) and the...

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Autori principali:	Wolfram Miller, Andrejs Sabanskis, Alexander Gybin, Kevin-P. Gradwohl, Arved Wintzer, Kaspars Dadzis, Jānis Virbulis, Radhakrishnan Sumathi
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	MDPI AG 2023-09-01
Serie:	Crystals
Soggetti:	global simulation Czochralski germanium thermal stresses dislocations
Accesso online:	https://www.mdpi.com/2073-4352/13/10/1440
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