Bandgap narrowing in zincblende III–V semiconductors: Finite-temperature full random-phase approximation and general analytical model
The bandgap narrowing (BGN) in zincblende III–V semiconductors is calculated in a finite-temperature full Random-Phase Approximation (RPA) formalism based on an isotropic dispersion model. The cases of n-type and p-type quasi-neutral regions and the case of a neutral electron–hole plasma are elabora...
Wedi'i Gadw mewn:
| Prif Awdur: | |
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| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
AIP Publishing LLC
2023-07-01
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| Cyfres: | AIP Advances |
| Mynediad Ar-lein: | http://dx.doi.org/10.1063/5.0149190 |
| Tagiau: |
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