High-mobility BaSnO3 grown by oxide molecular beam epitaxy
High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO3...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2016-01-01
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| coleção: | APL Materials |
| Acesso em linha: | http://dx.doi.org/10.1063/1.4939657 |
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