Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnorm...
Tallennettuna:
| Päätekijät: | , , , , , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
IEEE
2016-01-01
|
| Sarja: | IEEE Journal of the Electron Devices Society |
| Aiheet: | |
| Linkit: | https://ieeexplore.ieee.org/document/7302517/ |
| Tagit: |
Ei tageja, Lisää ensimmäinen tagi!
|
