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Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnorm...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijät: Seok-Woo Lee, Chang Bum Park, Pyo Jin Jeon, Sung-Wook Min, June Yeong Lim, Han Sol Lee, Jae-Sung Yoo, Soon Sung Yoo, Seongil Im
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: IEEE 2016-01-01
Sarja:IEEE Journal of the Electron Devices Society
Aiheet:
Linkit:https://ieeexplore.ieee.org/document/7302517/
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