Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy

The growth of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3(101̄0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure α-Ga2O3(101̄0) and α-(InxGa1−x)2O3(101̄0) thin fi...

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Bibliografske podrobnosti

Principais autores:	Martin S. Williams, Manuel Alonso-Orts, Marco Schowalter, Alexander Karg, Sushma Raghuvansy, Jon P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick Vogt
Format:	Artigo
Jezik:	Inglês
Izdano:	AIP Publishing LLC 2024-01-01
Serija:	APL Materials
Online dostop:	http://dx.doi.org/10.1063/5.0180041
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