Spin–Orbit Torque-Driven Perpendicular Magnetization Switching for Artificial Synapses in Co/Ho Multilayer Systems

Spin–orbit torque (SOT)-based spintronic devices have emerged as a preferred candidate for next-generation artificial synaptic devices due to their advantages of non-volatility, high speed, and low power consumption. The development of high-performance SOT-based artificial synaptic devices relies on...

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Autors principals:	Shaomin Li, Yidan Wei, Yuanyuan Chen, Kangyue Qu, Pingping Yu, Yanfeng Jiang
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2026-02-01
Col·lecció:	Nanomaterials
Matèries:	spintronic devices spin-orbit torque rare earth material artificial synapses
Accés en línia:	https://www.mdpi.com/2079-4991/16/4/243
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