Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/<i>p</i>-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding
The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on t...
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| Principais autores: | , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2020-07-01
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| Serija: | Crystals |
| Teme: | |
| Online dostop: | https://www.mdpi.com/2073-4352/10/8/636 |
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