Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires
III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle. We investigate theoretically how this effect influences the electron-to-hole ratio in Si-doped GaAs nanowires. Several factors...
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| Autori principali: | , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2020-04-01
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| Serie: | Nanomaterials |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2079-4991/10/5/833 |
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