Understanding and Hindering the Electron Leakage in Green InP Quantum‐Dot Light‐Emitting Diodes

Indium phosphide (InP) quantum‐dot light‐emitting diodes (QLEDs) are considered as one of the most promising candidates for emerging displays owing to their good luminous performance and environmentally friendly properties. The operation of green InP QLEDs relies on the radiative recombination of el...

Täydet tiedot

Bibliografiset tiedot

Päätekijät:	Tianqi Zhang, Fangqing Zhao, Pai Liu, Yangzhi Tan, Xiangtian Xiao, Zhaojin Wang, Weigao Wang, Dan Wu, Xiao Wei Sun, Jianhua Hao, Guichuan Xing, Kai Wang
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Wiley-VCH 2023-11-01
Sarja:	Advanced Photonics Research
Aiheet:	carrier injection balance electron leakage indium phosphide quantum-dot light-emitting diodes (QLEDs)
Linkit:	https://doi.org/10.1002/adpr.202300146
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