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First Evidence of Temporary Read Errors in TLC 3D-NAND Flash Memories Exiting From an Idle State

This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first after a sequence of program/verify and a idle rete...

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Bibliografski detalji
Glavni autori: Cristian Zambelli, Rino Micheloni, Salvatrice Scommegna, Piero Olivo
Format: Artigo
Jezik:Inglês
Izdano: IEEE 2020-01-01
Serija:IEEE Journal of the Electron Devices Society
Teme:
Online pristup:https://ieeexplore.ieee.org/document/8956089/
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