Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C

This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of...

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Detalhes bibliográficos

Principais autores:	Milče M. Smiljanić, Žarko Lazić, Vesna Jović, Branislav Radjenović, Marija Radmilović-Radjenović
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2020-02-01
coleção:	Micromachines
Assuntos:	no convex corner compensation parallelogram silicon wet etching tetramethylammonium hydroxide (tmah)
Acesso em linha:	https://www.mdpi.com/2072-666X/11/3/253
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