Focus on the Avalanche Breakdown Characteristic of Si- and InP-Based APDs Irradiated by Fast Neutrons
The Si- and InP-based APDs as the most important weak light semiconductor photodetectors to have achieved commercial success and are widely used in irradiation environments. Investigating the influencing mechanism of neutron irradiation on the above two types of APDs is of scientific and practical i...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2022-12-01
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| Serie: | Micromachines |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2072-666X/14/1/86 |
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