Temperature and Fluence Dependence Investigation of the Defect Evolution Characteristics of GaN Single Crystals Under Radiation with Ion Beam-Induced Luminescence
To investigate the in situ irradiation effects of gallium nitride at varying temperatures, we combined ion beam-induced luminescence spectroscopy with variable-temperature irradiation using a home-built IBIL system and a GIC4117 2 × 1.7 MV tandem accelerator. Unlike previous static studies—limited t...
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| Autores principales: | , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2026-01-01
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| Colección: | Quantum Beam Science |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2412-382X/10/1/2 |
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