Design and optimisation of high‐efficient class‐F ULP‐PA using envelope tracking supply bias control for long‐range low power wireless local area network IEEE 802.11ah standard using 65 nm CMOS technology

Abstract This article presents the design and optimisation of a sub‐1 GHz class‐F ultra‐low power (ULP) power amplifier (PA) in 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology. An envelope tracking (ET) supply biasing technique is adopted to improve the efficiency of class‐F PA. The...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Muhammad Ovais Akhter, Najam Muhammad Amin, Razia Zia
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley 2022-10-01
Цуврал:	IET Circuits, Devices and Systems
Нөхцлүүд:	CMOS integrated circuits low‐power electronics UHF integrated circuits UHF power amplifiers wireless LAN
Онлайн хандалт:	https://doi.org/10.1049/cds2.12125
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!