Basic approaches to simulation of resist mask formation in computational lithography
Main currently used resist mask formation models and problems solved have been overviewed. Stages of "full physical simulation" have been briefly analyzed based on physicochemical principles for conventional diazonapthoquinone (DNQ) photoresists and chemically enhanced ones. We have consid...
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| Hlavní autoři: | , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Pensoft Publishers
2020-03-01
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| Edice: | Modern Electronic Materials |
| On-line přístup: | https://moem.pensoft.net/article/55056/download/pdf/ |
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