Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE
<p>Abstract</p> <p>The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those...
שמור ב:
| Principais autores: | , , , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
SpringerOpen
2011-01-01
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| סדרה: | Nanoscale Research Letters |
| גישה מקוונת: | http://www.nanoscalereslett.com/content/6/1/180 |
| תגים: |
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