Calculation of Hole Concentrations in Zn Doped GaAs Nanowires
We have previously demonstrated that we can grow p-type GaAs nanowires using Zn doping during gold catalyzed growth with aerotaxy. In this investigation, we show how to calculate the hole concentrations in such nanowires. We base the calculations on the Zhang–Northrup defect formation energy. Using...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , , , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
MDPI AG
2020-12-01
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| Σειρά: | Nanomaterials |
| Θέματα: | |
| Διαθέσιμο Online: | https://www.mdpi.com/2079-4991/10/12/2524 |
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