SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS

Influence of technological parameters (temperature of substrate, number of Ge layers, ion treatment) on optical properties of Si/Ge nanostructures with Ge quantum dots have been studied. The Raman scattering lines related to the Si-Si, Ge-Ge and Si-Ge vibration modes have been detected in the Raman...

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Egile Nagusiak:	A. V. Mudryi, F. Mofidnahai, A. V. Karotki, A. V. Dvurechensky, Zh. V. Smagina, V. A. Volodin, P. L. Novikov
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	Belarusian National Technical University 2015-04-01
Saila:	Приборы и методы измерений
Gaiak:	si/ge nanostructures ge quantum dots raman scattering luminescence internal strains
Sarrera elektronikoa:	https://pimi.bntu.by/jour/article/view/117
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