Hysteresis and Photoconductivity of Few‐Layer ReSe2 Field Effect Transistors Enhanced by Air Pressure

Abstract This study reports the optoelectronic characterization of few‐layer ReSe2field effect transistors at different pressures. The output curves reveal dominant n‐type behavior and a low Schottky barrier at the metal contacts. The transfer curves show a significant hysteresis that can be exploit...

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Bibliographic Details

Main Authors:	Kimberly Intonti, Enver Faella, Loredana Viscardi, Arun Kumar, Ofelia Durante, Filippo Giubileo, Maurizio Passacantando, Hoi Tung Lam, Konstantinos Anastasiou, Monica F. Craciun, Saverio Russo, Antonio Di Bartolomeo
Format:	Artigo
Language:	Inglês
Published:	Wiley-VCH 2023-08-01
Series:	Advanced Electronic Materials
Subjects:	field effect transistors memories negative photoconductivity photodetectors rhenium diselenide
Online Access:	https://doi.org/10.1002/aelm.202300066
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