A Novel Si Nanosheet Channel Release Process for the Fabrication of Gate-All-Around Transistors and Its Mechanism Investigation

The effect of the source/drain compressive stress on the mechanical stability of stacked Si nanosheets (NS) during the process of channel release has been investigated. The stress of the nanosheets in the stacking direction increased first and then decreased during the process of channel release by...

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Detalhes bibliográficos

Principais autores:	Xin Sun, Dawei Wang, Lewen Qian, Tao Liu, Jingwen Yang, Kun Chen, Luyu Wang, Ziqiang Huang, Min Xu, Chen Wang, Chunlei Wu, Saisheng Xu, David Wei Zhang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2023-01-01
coleção:	Nanomaterials
Assuntos:	nanosheet gate-all-around transistor channel release isotropic dry etch high selectivity
Acesso em linha:	https://www.mdpi.com/2079-4991/13/3/504
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