Parameter modulation on p-type doping of AlGaN nanowires
The p-type doping process during the growth of AlGaN nanowires directly influences the optoelectronic properties of the related devices. However, research on the p-type ionization mechanism in AlxGa1-xN nanowires remains limited. In this work, we utilize first principles calculations to investigate...
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| Auteurs principaux: | , , , , , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Elsevier
2024-05-01
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| Collection: | Journal of Materials Research and Technology |
| Sujets: | |
| Accès en ligne: | http://www.sciencedirect.com/science/article/pii/S2238785424009943 |
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