High‐performance piezoresistive sensors based on transfer‐free large‐area PdSe2 films for human motion and health care monitoring

Abstract Two‐dimensional transition metal dichalcogenides (TMDs) are needed in high‐performance piezoresistive sensors due to their strong strain‐induced bandgap modification and thereby large gauge factors. However, integrating a conventional high‐temperature chemical vapor deposition (CVD)‐grown T...

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Detalhes bibliográficos

Principais autores:	Rui Zhang, Jie Lin, Tao He, Jiafang Wu, Zhuojun Yang, Liwen Liu, Shaofeng Wen, Yimin Gong, Haifeng Lv, Jing Zhang, Yi Yin, Fangjia Li, Changyong Lan, Chun Li
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Wiley 2024-01-01
Colecção:	InfoMat
Assuntos:	layered crystal PdSe2 piezoresistive effect strain sensor
Acesso em linha:	https://doi.org/10.1002/inf2.12484
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