Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention
Abstract Dynamic random-access memory (DRAM) has been scaled down to meet high-density, high-speed, and low-power memory requirements. However, conventional DRAM has limitations in achieving memory reliability, especially sufficient capacitance to distinguish memory states. While there have been att...
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| Principais autores: | , , , , |
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| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Springer
2024-10-01
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| Serija: | Discover Nano |
| Teme: | |
| Online dostop: | https://doi.org/10.1186/s11671-024-04106-5 |
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