The interface of SiO2/ZnS films studied by high resolution X-ray photoluminescence
ABSTRACT: Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its benefits as buffer layer, ZnS deposited via atomic layer deposition (ALD) renders intermixed interfaces to its substrate, which can be detrimental for device performance. Here, we are attempting to el...
Wedi'i Gadw mewn:
| Prif Awduron: | , , , , , |
|---|---|
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Elsevier
2018-01-01
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| Cyfres: | Theoretical and Applied Mechanics Letters |
| Mynediad Ar-lein: | http://www.sciencedirect.com/science/article/pii/S2095034918300643 |
| Tagiau: |
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