Metal–Insulator–Insulator–Metal (MIIM) Ag/SnO2/Al2O3/Ag Diodes Fabricated by Ultraprecise Dispensing and Atomic Layer Deposition

ABSTRACT Currently, high‐frequency, ultra‐fast, and tunneling diodes are mainly fabricated using traditional lithography and evaporation techniques, typically limited to wafer sizes. This work introduces a new method for fabricating metal–insulator–insulator–metal (MIIM) diodes using ultra‐precise d...

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Autors principals:	Aboubacar Savadogo, Klaus Huska, Rohit D. Chavan, Thomas Nyachoti Nyangonda, Jan Feßler, Bernard Odhiambo Aduda, Ulrich Wilhelm Paetzold, Uli Lemmer, Mohamed Hussein
Format:	Artigo
Idioma:	Inglês
Publicat:	Wiley-VCH 2026-02-01
Col·lecció:	Advanced Electronic Materials
Matèries:	metal–insulator–insulator–metal (MIIM) diode rectenna responsivity ultra‐precise dispensing wentzel‐kramers‐brillouin (WKB)
Accés en línia:	https://doi.org/10.1002/aelm.202500615
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