Hall element with two Schottky barrier contacts Al-p-Si

Way of the fabrication and results of studies of electrical and photoelectric characteristics of the Hall element with two current contacts and two Hall potential contacts on one surface of the silicon plate and two contacts Al-p-Si with the barrier Schottky on inverse surface of the plate, are...

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Κύριος συγγραφέας:	R. B. Burlakov
Μορφή:	Artigo
Γλώσσα:	Inglês
Έκδοση:	Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education 2020-09-01
Σειρά:	Омский научный вестник
Θέματα:	way of the fabrication of the hall element silicon p-type schottky barrier contacts al-p-si
Διαθέσιμο Online:	https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2020/4%20(172)/60-65%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf
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