SiC-based detectors for fast neutron measurements in a multi-energy field
Wide-bandgap semiconductor detectors like silicon carbide (SiC) are promising for fusion and fission environments due to their radiation hardness and thermal/mechanical stability. The 4H-SiC diodes studied, with a 60 µm ”p-n” junction, collect charge carriers generated by neutron reaction products a...
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| 主要な著者: | , , , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
EDP Sciences
2025-01-01
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| シリーズ: | EPJ Web of Conferences |
| 主題: | |
| オンライン･アクセス: | https://www.epj-conferences.org/articles/epjconf/pdf/2025/23/epjconf_animma2025_10010.pdf |
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