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Oxidation mechanism of aluminum nitride revisited

Abstract Different from the oxidation kinetics of other nitrides, the oxide layer on AlN can easily reach tens of micrometers at a temperature above 1200 °C. In the present study, the oxidation mechanism of AlN is investigated through microstructure observation. The analysis indicates that the oxide...

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Bibliografische Detailangaben
Hauptverfasser: Chun-Ting Yeh, Wei-Hsing Tuan
Format: Artigo
Sprache:Inglês
Veröffentlicht: Tsinghua University Press 2017-03-01
Schriftenreihe:Journal of Advanced Ceramics
Schlagworte:
Online-Zugang:http://link.springer.com/article/10.1007/s40145-016-0213-1
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