High‐fundamental‐mode output of 1064 nm vertical‐cavity surface‐emitting laser using double embedded antiresonant oxide islands
Abstract 1064 nm semiconductor lasers are crucial for optical communication, but the multitransverse‐mode nature of vertical‐cavity surface‐emitting laser (VCSEL) degrades beam quality over long distances. Traditional methods to achieve fundamental transverse mode often limit power output and modula...
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| Autores principales: | , , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Wiley
2025-06-01
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| Colección: | Information & Functional Materials |
| Materias: | |
| Acceso en línea: | https://doi.org/10.1002/ifm2.34 |
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