Photocapacitance relaxation and rigidity transition in GexAsxSe1-2x amorphous films
The photocapacitance relaxation of GexAsxSe1-2x thin films is investigated for x=0.05, 0.07, 0.09, 0.14, 0.16, 0.18, 0.20 0.25, and 0.30. Compositional dependences of the low-frequency dielectric permeability, decay time constant and the Kohlrausch parameter of nonexponentiality are...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2011-06-01
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| Edice: | Moldavian Journal of the Physical Sciences |
| On-line přístup: | https://mjps.nanotech.md/archive/2011/article/4367 |
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